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Intel SSD 660p Series (1.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
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| Locatia dispozitivului | Plug-in Card |
| Factor de forma | M.2 (2280) |
| Capacitate de stocare | 1 TB |
| Suporta canal de date | PCIe NVMe 3.0 x4 |
| Tehnologia pentru memorie | NAND Flash |
| Flash Memory Cell Technology | Quad-Level Cell |
| Maximum Random Read Rate | 220000 IOPS |
| Maximum Random Write Rate | 220000 IOPS |
| Maximum Sequential Read Rate | 1800 MB/s |
| Maximum Sequential Write Rate | 1800 MB/s |
| Total Bytes Written (TBW) | 200 TB |
| M.2 Interface Quantity | 1 |
| Erori nereparabile | 1 per 10^15 |
| Timpul presupus intre caderi | 1600000 h |
| Solid State Drive Features | AES 256-bit Encryption End-to-End Data Protection Intel Rapid Start Technology Intel Smart Response Technology |
| Toleranta la soc in mod operare | 1000G |
| Toleranta la soc stocare | 1000G |
| Toleranta la vibratii in operare | 2.17G |
| Toleranta la vibratii stocare | 3.13G |
| Consumul maxim de putere | 0.1 W |
| Consumul minim de putere | 0.04 W |
| Temperatura ambientală maximă de funcționare | 70 °C |
| Temperatura ambientală minimă de funcționare | 0 °C |
| Produse returnabile aflate in garantie | Yes |
| Termen garantie (luna) | 60 luni |
| Criterii de validare a garantiei | Serial Number |
| Greutatea bruta a pachetului | 0.1 kg |
| Greutatea neta a pachetului | 0.1 kg |
| Bucati in pachet | 1 |
| Greutatea bruta a cutiei | 0.1 kg |
| Retail Packaging Net Weight Carton | 0.1 kg |
| Retail Packaging Net Weight Plastic | 0.1 kg |
| Pachete (colete) in cutie | 1 |
| Tip pachet | Retail |
| EAN Code | 5032037131605 |
SSDPEKNW010T8X1 A
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Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write